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| Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. September 1998 Features * 1A, 80V and 100V [ /Title (RFL1N 08, RFL1N1 0) /Subject 1A, 0V and 00V, .200 hm, Nhanel, ower OSETs) /Author ) /Keyords Harris emionducor, Nhanel, ower OSETs, O04AA) /Creator ) /DOCIN O pdf- * rDS(ON) = 1.200 Ordering Information PART NUMBER RFL1N08 RFL1N10 PACKAGE TO-205AF TO-205AF BRAND RFL1N08 RFL1N10 NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-204AA DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1385.2 5-1 RFL1N08, RFL1N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1N08 80 80 1 5 20 8.33 0.0667 -55 to 150 260 RFL1N10 100 100 1 5 20 8.33 0.0667 -55 to 150 260 UNITS V V A A V W W/oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .TL CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 80 100 VGS(TH) IDSS VDS = VGS, ID = 250A, (Figure 8) VGS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC 2 1 4 1 25 100 1.200 VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) 17 30 30 30 25 45 45 50 200 80 25 V V V A A A nA ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFL1N08 RFL1N10 Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case ID(ON) IGSS rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V ID = 5.6A, VGS = 10V, (Figures 6, 7) VDD = 50V, VGS = 10V, ID 1A, RG = 50, RL = 50 (Figures 10, 11, 12) MOSFET Switching Times are Essentially Independent of Operating Temperature Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS TJ = 25oC, ISD = 1A, VGS = 0V TJ = 25oC, ISD = 1A, dISD/dt = 100A/s MIN TYP 100 MAX 1.4 UNITS V ns 5-2 RFL1N08, RFL1N10 Typical Performance Curves Unless Otherwise Specified 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 1.2 1.0 0.8 0.6 0.4 0.2 0 25 0.8 0.6 0.4 0.2 0 TC, CASE TEMPERATURE (oC) 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TC =25oC TJ = MAX RATED ID, DRAIN CURRENT (A) OPERATION IN THIS AREA LIMITED BY RDS(ON) PULSE DURATION = 80s Id, DRAIN CURRENT, AMPS VGS = 10V VGS = 20V 2.5 2 VGS = 9V VGS = 8V VGS = 7V 1 0.1 RFL1N08 RFL1N10 1A VGS = 6V VGS = 5V VGS = 4V 0.01 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 0 1 2 3 4 5 6 7 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 9 10 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(0N), DRAIN TO SOURCE CURRENT (A) 4.0 C= 25 o C 3.5 3.0 2.5 PULSE DURATION = 80s VDS = 10V 1.6 1.4 rDS(ON), DRAIN TO SOURSE ON RESISTANCE 1.2 1 0.8 0.6 0.4 0.2 TC = 125oC 0 10 0 0.5 1 1.5 2.0 2.5 TC = -40oC TC = 25oC VGS = 10V PULSE DURATION = 80s CASE TEMPERATURE (TC) = 125oC 25 o C 2.0 1.5 1 0.5 0 TC = -40oC TC = 25oC =1 TC 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) T C= -4 0o C T ID, DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 RFL1N08, RFL1N10 Typical Performance Curves Unless Otherwise Specified 2.0 NORMALIZED DRAIN TO SOURCE ID = 1A, VGS = 10V (Continued) 1.4 VGS = VDS, ID = 250A 1.0 NORMALIZED GATE THRESHOLD VOLTAGE 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 1.5 ON RESISTANCE 1.2 1.0 0.5 0.8 0 -50 0.6 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 240 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VGS, GATE TO SOURCE VOLTAGE (v) 200 C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS VDD = BVDSS 75 160 120 CISS 80 COSS 40 CRSS 0 0 10 20 30 40 50 60 70 VDS, DRAIN TO SOURCE (V) GATE SOURCE VOLTAGE VDD = BVDSS 8 50 RL = 50 IG (REF) = 0.095 mA VGS = 10V 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS DRAIN SOURCE VOLTAGE 6 4 25 2 0 I (REF) 20 G IG (ACT) t, TIME (s) I (REF) 20 G IG (ACT) 0 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4 |
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